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| polyfet rf devices SK701 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 45.0 Watts Push - Pull Package Style AK HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 110 Watts Junction to Case Thermal Resistance o 1.40 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 20 V 6.5 A RF CHARACTERISTICS ( SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 10 55 TYP 45.0 WATTS OUTPUT ) MAX UNITS dB % 20:1 TEST CONDITIONS Idq = 0.40 A, Vds = 28.0 V, F = Idq = 0.40 A, Vds = 28.0 V, F = 500 MHz 500 MHz VSWR Relative Idq = 0.40 A, Vds = 28.0 V, F = 500 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback Capacitance Common Source Output Capacitance 1 1.2 0.85 7.00 50.0 3.0 32.0 MIN 65 1.0 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 20.00 mA, Vgs = 0V Vds = 28.0 V, Vgs = 0V Vds = 0V Vgs = 30V Ids = 0.10 A, Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 2.50 A Vgs = 20V, Vds = 10V Vds = 28.0 Vgs = 0V, F = 1 MHz Vds = 28.0 Vgs = 0V, F = 1 MHz Vds = 28.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 03/28/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com SK701 POUT VS PIN GRAPH SK701 F=500MHZ, VDS=28V, Idq=.4A 60 55 50 45 40 35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7 9 1 0 5 10 15 20 25 30 10 13 14 100 CAPACITANCE VS VOLTAGE S1A 1 DIE CAPACITANCE Ciss Efficiency = 50% Pout 12 Coss 10 Gain 11 Crss PIN IN WATTS VDS IN VOLTS IV CURVE S1A 1 DIE IV 8 7 6 ID IN AMPS 5 4 3 2 1 0 0 2 vg=2v 4 6 Vg=4v 8 10 12 VDS Vg=6vINVOLTS vg=8v 14 0 16 18 vg=12v 20 ID & GM VS VGS 10.00 S1A 1 DIE ID & GM Vs VG Id Id in amps; Gm in mhos 1.00 gM 0.10 0 2 4 6 8 Vgs in Volts 10 12 14 Zin Zout PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 .XXX +/-.005 inches POLYFET RF DEVICES REVISION 03/28/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com |
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